No | Part number | Description ( Function ) | Manufacturers | |
3 | HGTP12N60B3 | 27A/ 600V/ UFS Series N-Channel IGBTs HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l |
Intersil Corporation |
|
2 | HGTP12N60B3D | 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Th |
Fairchild Semiconductor |
|
1 | HGTP12N60B3D | 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 File Number 4411.2 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipo |
Intersil Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |