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Datasheet HGT1S7N60C3DS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | HGT1S7N60C3DS | 14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes S E M I C O N D U C T O R
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
• 14A, 600V at TC = 25oC • • • • • 600V Switching SOA Ca |
Fairchild Semiconductor |
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1 | HGT1S7N60C3DS | 14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTP7N60C3D, HGT1S7N60C3DS
Data Sheet January 2000 File Number 4150.2
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices |
Intersil Corporation |
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