No | Part number | Description ( Function ) | Manufacturers | |
4 | HGT1S14N36G3VL | 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS December 2001 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175 C • Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level d |
Fairchild Semiconductor |
|
3 | HGT1S14N36G3VL | 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS June 1995 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175 C • Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level devic |
Intersil Corporation |
|
2 | HGT1S14N36G3VLS | 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS December 2001 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175 C • Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level d |
Fairchild Semiconductor |
|
1 | HGT1S14N36G3VLS | 14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS June 1995 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175 C • Ignition Energy Capable o Description This N-Channel IGBT is a MOS gated, logic level devic |
Intersil Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |