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HGH25N120A PDF Datasheet

The HGH25N120A is N-channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HGH25N120A
N-Channel Enhancement Mode Field Effect Transistor

汕头华汕电子器件有限公司 N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A █ Applications • Induction heating and Microwave oven • Soft switching applications █ Features TO-3P • Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V • High input impedance • Field stop trench technology offer superior conduction and switching performance

HUASHAN ELECTRONIC
HUASHAN ELECTRONIC
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