No | Part number | Description ( Function ) | Manufacturers | |
2 | HFB1N70 | N-Channel MOSFET HFB1N70 Jan 2007 HFB1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10.3 � |
SemiHow |
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1 | HFB1N70S | N-Channel MOSFET HFB1N70S Dec 2012 HFB1N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ȍ ID = 0.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ |
SemiHow |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |