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HFA40HF120C PDF Datasheet

The HFA40HF120C is Soft Recovery Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HFA40HF120C
Soft Recovery Diode

PD-91797 PRELIMINARY HFA40HF120C Ultrafast, Soft Recovery Diode VR = 1200V VF = 4.46V Qrr = 370nC HEXFRED Features TM (ISOLATED BASE) • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount ANODE COMMON CATHODE ANODE di(rec)M/dt = 380A/µs Description HEXFRED diodes are optimized to reduce losses

International Rectifier
International Rectifier
pdf

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Recommended search results related to HFA40HF120C

Part No Description ( Function) Manufacturers PDF
HFA40HF120   Soft Recovery Diode

PD-20376 HFA40HF120 HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount CATHODE ANODE TM Ultrafast, Soft Recovery Diode (ISOLATED BASE) VR = 1200V VF = 3.1V Qrr

International Rectifier
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C2M0040120D   Silicon Carbide Power MOSFET

VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 60 A RDS(on) 40 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances

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Cree
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C4D40120D   Silicon Carbide Schottky Diode

C4D40120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC<135˚C 1200 V = 54 A 260 nC Qc = Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switchi

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CBD40120LCT   Low VF Schottky Rectifier

datasheet39.com CBD40120LCT LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES • Low forward voltage drop, low power losses 0.624(15.87) 120 Volts CURRENT 40 Amperes 0.419(10.66) 0.387(9.85) 0.139(3.55) MIN. 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) • High efficiency o

PanJit International
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CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEM

CREE
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