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Datasheet HCPL-T250 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HCPL-T250 | 1.5 Amp Output Current IGBT Gate Drive Optocoupler www.datasheet4u.com
1.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data
HCPL-T250
Features
• Input Threshold Current (IFLH): 5 mA (Max.) • Supply Current (ICC): 11 mA (Max.) • Supply Voltage (VCC): 15-35 V • Output Current (IO): ± 0.5 A (Min.) • Switching Time (tPLH/tPHL): | Agilent Technologies | igbt |
HCP Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HCP | Switchmode Power Supplies
HCP Series
· Solid Aluminium Electrolytic Capacitor with Conductive Polymer · Ultra low ESR · High Ripple Current · Switchmode Power Supplies, Computer, DC/DC Converter · Noise Suppression in Smoothing / High-Frequency Circuits
lower ESR miniaturized
CD 284 XY
HCP
HPM
I Jianghai Europe GmbH data | | |
2 | HCP10C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP10C60
Silicon Controlled Rectifier
¨€
Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type
¨€
General Description
Standard ETC rectifier | | |
3 | HCP12C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP12C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type
█ General Description
Standard gate t ETC rectifier | | |
4 | HCP12NK65V | N-Channel MOSFET HCP12NK65V
Apr 2014
HCP12NK65V
650V N-Channel Super Junction MOSFET
BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics � SemiHow mosfet | | |
5 | HCP20C60 | Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd.
HCP20C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=20A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type
█ General Description
Standard gate t SHANTOU HUASHAN ELECTRONIC DEVICES rectifier | | |
6 | HCP20NT60V | N-Channel MOSFET HCP20NT60V
Apr 2014
HCP20NT60V
600V N-Channel Super Junction MOSFET
BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics � SemiHow mosfet | | |
7 | HCP60R750V | 600V N-Channel Super Junction MOSFET HCP60R750V
HCP60R750V
600V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe O SemiHow mosfet | |
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