No | Part number | Description ( Function ) | Manufacturers | |
2 | HAT1021 | Silicon P Channel Power MOS FET High Speed Power Switching HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 D (Z) 5th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R Absolute Maximum Ratings (Ta = 25°C |
Hitachi Semiconductor |
|
1 | HAT1021R | Silicon P Channel Power MOS FET High Speed Power Switching HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 D (Z) 5th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R Absolute Maximum Ratings (Ta = 25°C |
Hitachi Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |