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Datasheet H8NA60FI Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | H8NA60FI | STH8NA60FI
®
STW8NA60 STH8NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STW 8NA60 STH8NA60F I
V DSS 600 V 600 V
R DS(on) <1 Ω <1 Ω
ID 8 A 5 A
s s s s s s s
TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVAL | ST Microelectronics | data |
H8N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | H8N60 | MTH8N60 Motorola Semiconductors data | | |
2 | H8N80FI | STH8N80FI STMicroelectronics data | | |
3 | H8NA60FI | STH8NA60FI
®
STW8NA60 STH8NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STW 8NA60 STH8NA60F I
V DSS 600 V 600 V
R DS(on) <1 Ω <1 Ω
ID 8 A 5 A
s s s s s s s
TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVAL ST Microelectronics data | | |
4 | H8NB90FI | STH8NB90FI
N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET
TYPE STW8NB90 STH8NB90FI
s s s s s
STW8NB90 STH8NB90FI
VDSS 900 V 900 V
RDS(on) < 1.45 Ω < 1.45 Ω
ID 8A 5A
TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRI ST Microelectronics data | |
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Número de pieza | Descripción | Fabricantes | |
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