No | Part number | Description ( Function ) | Manufacturers | |
2 | H6N03LAG | IPDH6N03LAG OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant IPDH6N03LA G IPFH6N03LA G IPSH6N |
Infineon Technologies |
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1 | H6NA80FI | STH6NA80FI ® STW6NA80 STH6NA80FI N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE V DSS 800 V 800 V R DS(on) < 2.2 Ω < 2.2 Ω ID 5.4 A 3.4 A STW 6NA80 STH6NA80FI s s s s s s s TYPICAL RDS(on) = 1.8 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILI |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |