No | Part number | Description ( Function ) | Manufacturers | |
1 | H27UCG8T2BTR-BC | F20 64Gb MLC NAND Flash Memory H27UCG8T2BTR-BC 64Gb(8192M x 8bit) MLC NAND Flash F20 64Gb MLC NAND Flash Memory Legacy TSOP This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.1 / Oct. 2012 1 Free Datasheet http:// / H27UCG8T2BTR-BC 64Gb(819 |
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H27UCG8T2BYR-BC | 64Gb(8192M x 8bit) MLC NAND Flash H27UCG8T2BYR-BC 64Gb(8192M x 8bit) MLC NAND Flash F20 64Gb MLC NAND Flash Memory Legacy LGA52 This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility for use of circuits described. No patent licenses ar |
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H27UCG8T2MYR | 64Gb (8192M x 8bit) NAND Flash H27UCG8T2M Series 64Gb (8192M x 8bit) NAND Flash 64Gb Flash H27UCG8T2M http://www.DataSheet4U.net/ Rev 1.0/ Aug. 2010 1 datasheet pdf - http://www.DataSheet4U.net/ H27UCG8T2M Series 64Gb (8192M x 8bit) NAND Flash Document Title 64Gbit (8192 M x 8 bit) NAND Flash Memory Revi |
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2SC2782 | Silicon NPN Epitaxial Planar Type Transistor TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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LM317 | This is a popular adjustable voltage regulator. |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |