| No | Part number | Description ( Function ) | Manufacturers | |
| 26 | H2717 | NPN SILICON TRANSISTOR N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2717 █ APPLICATIONS TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… -55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ PC——Collector Dissipation� |
 SHANTOU HUASHAN ELECTRONIC DEVICES |
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| 25 | H27S2G6F2C | 2Gb NAND FLASH APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash 2Gb NAND FLASH H27U2G8_6F2C H27S2G8_6F2C Rev 0.0 / Apr. 2010 1 *da93e538-013c* B34416/177.179.157.84/2010-06-28 11:19 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash D |
 Hynix |
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| 24 | H27S2G8F2C | 2Gb NAND FLASH APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash 2Gb NAND FLASH H27U2G8_6F2C H27S2G8_6F2C Rev 0.0 / Apr. 2010 1 *da93e538-013c* B34416/177.179.157.84/2010-06-28 11:19 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)2G8_6F2C 2 Gbit (256M x 8 bit) NAND Flash D |
Hynix |
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| 23 | H27S4G6F2D | 4 Gbit (512M x 8 bit) NAND Flash APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 1 *ba53f20d-240c* B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash D |
Hynix |
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| 22 | H27S4G8F2D | 4 Gbit (512M x 8 bit) NAND Flash APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 1 *ba53f20d-240c* B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash D |
Hynix |
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| 21 | H27U1G8F2B | 1 Gbit (128 M x 8 bit) NAND Flash 1 H27U1G8F2B Series 1 Gbit (128 M x 8 bit) NAND Flash 1 Gb NAND Flash H27U1G8F2B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Dec. 2009 1 1 H27U1G8F2B Series 1 Gbit (128 M x 8 bit) NAND Flash Document Title 1 Gbit (128 M |
Hynix |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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