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Datasheet GTS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | GTS217E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B
GTS217E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 22m 7A
The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectivenes |
 GTM |
 |
| 5 | GTS6923 | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/05/04 REVISED DATE :
GTS6923
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 50m -3.5A
Description
The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and cost-effe |
GTM |
|
| 4 | GTS9922E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/10/26 REVISED DATE :2007/01/25B
GTS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 15m 6.8A
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-res |
GTM |
|
| 3 | GTS9926 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B
GTS9926
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 28m 6A
Description
The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra l |
GTM |
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