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Datasheet GT30J126 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT30J126 | Silicon N-Channel IGBT GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switching Applications Fast Switching Applications
• • • Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : |
Toshiba |
GT30J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT30J126 | Silicon N-Channel IGBT |
Toshiba |
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GT30J122 | 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING |
Toshiba Semiconductor |
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GT30J122A | Silicon N-Channel IGBT |
Toshiba |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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