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Datasheet GT30J122 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | GT30J122 | 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING www.DataSheet.co.kr
GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
• • • Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) |
 Toshiba Semiconductor |
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| 1 | GT30J122A | Silicon N-Channel IGBT GT30J122A
Discrete IGBTs Silicon N-Channel IGBT
GT30J122A
1. Applications
• • Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications The product(s) described herein should not be used for any other application.
No |
 Toshiba |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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