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Datasheet GB1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | GB100DA60UP | Insulated Gate Bipolar Transistor www.DataSheet.co.kr
GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
• NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery
SOT-227
• Ful |
 Vishay Siliconix |
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| 10 | GB100TS60NPBF | Ultrafast Speed IGBT www.DataSheet.co.kr
GB100TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A
FEATURES
• Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • |
Vishay Siliconix |
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| 9 | GB10B60KD | IRGB10B60KD
PD - 94382D
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
VCES = 600V IC = 12A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Squar |
 International Rectifier |
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| 8 | GB10NB37LZ | STGB10NB37LZ ®
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB10NB37LZ
s s s s s s
V CES CLAMPED
V CE(s at) < 1.8 V
IC 10 A
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTI |
 ST Microelectronics |
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| Número de pieza | Descripción | Fabricantes | |
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