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Datasheet GB0 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | GB01SHT06-CAL | High Temperature Silicon Carbide Power Schottky Diode
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior � |
 GeneSiC |
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| 6 | GB01SHT06-CAU | High Temperature Silicon Carbide Power Schottky Diode
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior � |
GeneSiC |
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| 5 | GB01SHT12-CAL | High Temperature Silicon Carbide Power Schottky Diode
High Temperature Silicon Carbide Power Schottky Diode
Features
1200 V Schottky rectifier 210°C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior � |
GeneSiC |
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| 4 | GB02N120 | SGB02N120
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high rugg |
 Infineon Technologies AG |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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