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Datasheet GA5 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | GA500TD60U | HALF-BRIDGE IGBT DUAL INT-A-PAK
PD - 50048D
GA500TD60U
"HALF-BRIDGE" IGBT DUAL INT-A-PAK
Features
• Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparal |
 International Rectifier |
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| 11 | GA50JT06-258 | Junction Transistor GA50JT06-258
Normally – OFF Silicon Carbide Junction Transistor
Features
225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Compatible with 5 V TTL Gate Drive Temperature Independent Switching Performanc |
 GeneSiC |
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| 10 | GA50JT06-CAL | OFF Silicon Carbide Junction Transistor Die Datasheet
GA50JT06-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
• 210°C maximum operating temperature • Gate Oxide Free SiC switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacit |
GeneSiC |
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| 9 | GA50JT12-247 | Normally - OFF Silicon Carbide Junction Transistor Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperatur |
GeneSiC |
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