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G4PC4OUD PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
15 G4PC30F
IRG4PC30F

PD 91459B IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Speed IGBT • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package VCES = 600V G E V

International Rectifier
International Rectifier
pdf
14 G4PC30KD
IRG4PC30KD

PD -91587A IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

International Rectifier
International Rectifier
pdf
13 G4PC30S
IRG4PC30S

PD - 91586A INSULATED GATE BIPOLAR TRANSISTOR IRG4PC30S Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.4V

International Rectifier
International Rectifier
pdf
12 G4PC30U
IRG4PC30U

PD 91461E IRG4PC30U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1

International Rectifier
International Rectifier
pdf
11 G4PC40FD
IRG4PC40FD

PD 91464B IRG4PC40FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-reco

International Rectifier
International Rectifier
pdf
10 G4PC40K
IRG4PC40K

PD - 9.1585B IRG4PC40K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(o

International Rectifier
International Rectifier
pdf



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