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Datasheet G4PC4OUD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 15 | G4PC30F | IRG4PC30F PD 91459B
IRG4PC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Fast Speed IGBT
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficie |
 International Rectifier |
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| 14 | G4PC30KD | IRG4PC30KD PD -91587A
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • T |
International Rectifier |
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| 13 | G4PC30S | IRG4PC30S PD - 91586A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30S
Standard Speed IGBT
Features
• Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Indu |
International Rectifier |
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| 12 | G4PC30U | IRG4PC30U PD 91461E
IRG4PC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan |
International Rectifier |
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