No | Part number | Description ( Function ) | Manufacturers | |
1 | G4BC30W | IRG4BC30W PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offer |
International Rectifier |
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Recommended search results related to G4BC30W |
Part No | Description ( Function) | Manufacturers | |
AUIRG4BC30S-S | INSULATED GATE BIPOLAR TRANSISTOR AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL INSULATED GATE BIPOLAR TRANSISTOR C Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.4V Features • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Lead-Free, RoHS Complian |
IRF |
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AUIRG4BC30S-SL | INSULATED GATE BIPOLAR TRANSISTOR AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL INSULATED GATE BIPOLAR TRANSISTOR C Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.4V Features • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Lead-Free, RoHS Complian |
IRF |
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AUIRG4BC30U-S | UltraFast Speed IGBT AUTOMOTIVE GRADE PD - 96335 INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualifi |
International Rectifier |
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AUIRG4BC30U-SL | UltraFast Speed IGBT AUTOMOTIVE GRADE PD - 96335 INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualifi |
International Rectifier |
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G4BC30FD | IRG4BC30FD PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distr |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |