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No Part number Description ( Function ) Manufacturers PDF
14 G4B
GLASS PASSIVATED JUNCTION RECTIFIER

G4A THRU G4J GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 600 Volts * Case Style G4 Forward Current - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA ♦ Capable of me

General Semiconductor
General Semiconductor
pdf
13 G4BC20F
IRG4BC20F

PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E

International Rectifier
International Rectifier
pdf
12 G4BC20FD
IRG4BC20FD

PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultra

International Rectifier
International Rectifier
pdf
11 G4BC20KD
IRG4BC20KD

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

International Rectifier
International Rectifier
pdf
10 G4BC20U
IRG4BC20U

PD - 91448D INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20U UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C G E n-channel Benefits • Ge

International Rectifier
International Rectifier
pdf
9 G4BC20UD
IRG4BC20UD

PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED ultr

International Rectifier
International Rectifier
pdf



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