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Datasheet G40N60A4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G40N60A4 | HGTG40N60A4 HGTG40N60A4
Data Sheet August 2003 File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of |  Fairchild Semiconductor | data |
G40 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G40 | Voltage-Controlled Attenuator Module %& '( )*+' ,(- .-/*+0( (10(22(+ & +3(- & .+ 2.33 4 ) 5 6, 7 8& 98 '6+*/& 0 -*+9( ) . /8:5 6, 7 *3 3% & 08& +9 4 ; < . = 5 6, 7 4 ; < . = 5 6, 7
" 9 !$ "> ? @!< " " $ "! !$ $ !@ # $ # ! " @" ? > " @! $ " #! # A ! ! ! !$ ! # ! ? ?! B $ ! > !@ ) " .C ! 3$ / $! # D @ " > ! /& 2C3 'C !A ! ! ! !@ A ?
!
 Tyco Electronics data | | |
| 2 | G4000EC450 | Anode Shorted Gate Turn-Off Thyristor WESTCODE
An IXYS Company
Date:- 27 Sep, 2004 Data Sheet Issue:- 1
Anode Shorted Gate Turn-Off Thyristor Type G4000EC450
Absolute Maximum Ratings
VDRM VDSM VRRM VDC-link
VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak re  IXYS thyristor | | |
| 3 | G400SD | SCHOTTKY BARRIER DIODE
CORPORATION
G400SD
Description Package Dimensions SOT-23
ISSUED DATE :2003/06/03 REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 5 A
The G400SD is high frequency rectification for switching power  GTM diode | | |
| 4 | G401SD | SCHOTTKY BARRIER DIODE
CORPORATION
G401SD
Description Package Dimensions SOT-23
ISSUED DATE :2003/06/03 REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 0 . 2 A
The G401SD is high frequency rectification for switching power GTM diode | | |
| 5 | G402SD | SCHOTTKY BARRIER DIODE
CORPORATION
G402SD
Description Package Dimensions SOT-23
ISSUED DATE :2003/06/03 REVISED DATE :2006/05/24B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 0 . 3 A
The G402SD is high frequency rectification for switching power GTM diode | | |
| 6 | G40H603 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGW40N60H3
600VIGBT Highspeedswitchingseriesthirdgeneration
DataSheet
IndustrialPowerControl
IGW40N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnolo  Infineon igbt | | |
| 7 | G40N120CE | TSG40N120CE TO-264
Pin Definition: 1. Gate 2. Collector 3. Emitter
TSG40N120CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
VCES (V)
VGES (V)
1200
±20
IC (A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction an  Taiwan Semiconductor data | |
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