G30N60HS PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | G30N60HS | High Speed IGBT SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution PG-TO-220-3-1 • High r |
 Infineon |
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G30N60 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| G30N60 | HGTG30N60 HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MO |
 ETC |
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| G30N60A4D | SMPS Series N-Channel IGBT HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a |
 Fairchild Semiconductor |
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| G30N60HS | High Speed IGBT SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - mo |
Infineon |
|