No | Part number | Description ( Function ) | Manufacturers | |
2 | G03 | 3.0V Primary lithium-sulfur dioxide (Li-SO2)High drain capability 1 - 2 AA - size spiral cell Primary lithium batteries G 04/3 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability 1 /2 AA - size spiral cell Benefits • High and stable discharge voltage • High pulse capability • Performance not affected by cell orientation • Long storage possible before use • Ability to withstand extreme temperature Key features Cell size reference Electrical |
SAFT |
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1 | G03H1202 | High Speed 2-Technology IGA03N120H2 HighSpeed 2-Technology C • • Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Gate-Control G E P-TO220- |
Infineon |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |