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Datasheet FQPF10N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FQPF10N60 | N-Channel MOSFET FQP10N60-FQPF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The FQP10N60 & FQPF10N60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss |
 Oucan Semi |
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| 2 | FQPF10N60C | 600V N-Channel MOSFET FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET
November 2013
FQP10N60C / FQPF10N60C
N-Channel QFET® MOSFET
600 V, 9.5 A, 730 mΩ
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This adva |
 Fairchild Semiconductor |
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| 1 | FQPF10N60CF | N-Channel MOSFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
February 2007
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Features
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt c |
Fairchild Semiconductor |
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