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FQP12N60C PDF Datasheet

The FQP12N60C is Fqp12n60c/fqpf12n60c. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FQP12N60C
FQP12N60C/FQPF12N60C

FQP12N60C/FQPF12N60C QFET FQP12N60C/FQPF12N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high en

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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FQP12N60 April 2000 QFET FQP12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min

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2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -

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UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT)

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