No | Part number | Description ( Function ) | Manufacturers | |
1 | FQP12N60C | FQP12N60C/FQPF12N60C FQP12N60C/FQPF12N60C QFET FQP12N60C/FQPF12N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high en |
Fairchild Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to FQP12N60C |
Part No | Description ( Function) | Manufacturers | |
FQP12N60 | 600V N-Channel MOSFET FQP12N60 April 2000 QFET FQP12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min |
Fairchild Semiconductor |
|
1260PT | Phase Control Thyristors SEMICONDUCTOR RRooHHSS SEMICONDUCTOR 1260PT Series RRooHHSS www.nellsemi.com Page 2 of 2 |
nELL |
|
2SB1260 | Power Transistor 2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ - |
ROHM Semiconductor |
|
2SB1260 | PNP Plastic-Encapsulate Transistor 2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation |
Weitron Technology |
|
2SB1260 | POWER TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT) |
Unisonic Technologies |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |