No | Part number | Description ( Function ) | Manufacturers | |
2 | FM28V100 | 1Mbit Bytewide F-RAM Memory Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion (1014) Read/Writes • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules • No battery concerns • Monolithic rel |
Ramtron |
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1 | FM28V100 | 1-Mbit (128 K x 8) F-RAM Memory FM28V100 1-Mbit (128 K × 8) F-RAM Memory 1-Mbit (128 K × 8) F-RAM Memory Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 30 ns cycle time ❐ Advanced high |
Cypress Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |