FJV PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 36 | FJV1845 | NPN Epitaxial Silicon Transistor FJV1845 FJV1845 Amplifier Transistor • Complement to FJV992 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Juncti |
 Fairchild Semiconductor |
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| 35 | FJV3101 | NPN Epitaxial Silicon Transistor FJV3101R FJV3101R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R21 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unles |
Fairchild Semiconductor |
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| 34 | FJV3101R | NPN Epitaxial Silicon Transistor FJV3101R FJV3101R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R21 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unles |
Fairchild Semiconductor |
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| 33 | FJV3102 | NPN Epitaxial Silicon Transistor FJV3102R FJV3102R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R22 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless othe |
Fairchild Semiconductor |
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| 32 | FJV3102R | NPN Epitaxial Silicon Transistor FJV3102R FJV3102R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R22 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless othe |
Fairchild Semiconductor |
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| 31 | FJV3103R | NPN Epitaxial Silicon Transistor FJV3103R FJV3103R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R23 NPN Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°C unless o |
Fairchild Semiconductor |
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