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Datasheet FJV Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 36 | FJV1845 | NPN Epitaxial Silicon Transistor FJV1845
FJV1845
Amplifier Transistor
• Complement to FJV992
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage |
 Fairchild Semiconductor |
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| 35 | FJV3101 | NPN Epitaxial Silicon Transistor FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R21
NPN E |
Fairchild Semiconductor |
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| 34 | FJV3101R | NPN Epitaxial Silicon Transistor FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R21
NPN E |
Fairchild Semiconductor |
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| 33 | FJV3102 | NPN Epitaxial Silicon Transistor FJV3102R
FJV3102R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R22
R1 B R2 |
Fairchild Semiconductor |
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