No | Part number | Description ( Function ) | Manufacturers | |
21 | FJA13009 | Silicon NPN triple diffusion planar transistor(High voltage switching transistor) SEMICONDUCTOR FJA13009 Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W 5 . 0 ±0 . 2 RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 TO-3P(B) 20.0 min FEATURES High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to t |
NELL SEMICONDUCTOR |
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20 | FJA13009 | High Voltage Switch Mode Applications FJA13009 FJA13009 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag |
Fairchild Semiconductor |
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19 | FJA13009 | High Voltage Switch Mode Applications FJA13009 FJA13009 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag |
Fairchild Semiconductor |
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18 | FJA13009 | High Voltage Switch Mode Applications FJA13009 FJA13009 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag |
Fairchild Semiconductor |
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17 | FJA3835 | Power Amplifier FJA3835 FJA3835 Power Amplifier • High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current |
Fairchild Semiconductor |
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16 | FJA4210 | PNP Epitaxial Silicon Transistor FJA4210 FJA4210 Audio Power Amplifier • • • • High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310 1 TO-3P 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitt |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |