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Datasheet FGL Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | FGL35N120FTD | IGBT FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT
FGL35N120FTD
1200 V, 35 A Field Stop Trench IGBT
November 2013
Features
• Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A • High Input Impedance
Applications
• Solar Inverter |
Fairchild Semiconductor |
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7 | FGL40N120AN | 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT
FGL40N120AN
1200V NPT IGBT
July 2007
IGBT®
Features
• High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
Description
Employ |
Fairchild Semiconductor |
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6 | FGL40N120AND | 1200V NPT IGBT FGL40N120AND 1200V NPT IGBT
February 2008
FGL40N120AND
1200V NPT IGBT
tm
Features
• High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls a |
Fairchild Semiconductor |
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5 | FGL40N150 | Electrical Characteristics of the IGBT FGL40N150D
IGBT
FGL40N150D
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications.
Features
• • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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