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FGA25N120 PDF Datasheet

The FGA25N120 is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
6 FGA25N120AN
IGBT ( Insulated Gate Bipolar Transistor )

FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features • High speed switching • L

Fairchild Semiconductor
Fairchild Semiconductor
pdf
5 FGA25N120AND
IGBT ( Insulated Gate Bipolar Transistor )

FGA25N120AND IGBT FGA25N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features • • • • High speed switching Low satura

Fairchild Semiconductor
Fairchild Semiconductor
pdf
4 FGA25N120ANTD
NPT Trench IGBT

FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C • Extremely Enhanced Avalanche Capability Application

Fairchild Semiconductor
Fairchild Semiconductor
pdf
3 FGA25N120ANTDTU
IGBT ( Insulated Gate Bipolar Transistor )

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Inducti

Fairchild Semiconductor
Fairchild Semiconductor
pdf
2 FGA25N120ANTD_F109
25A NPT Trench IGBT

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT April 2013 FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V  @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ  @ IC = 25 A and TC = 25C • Extremely E

Fairchild Semiconductor
Fairchild Semiconductor
pdf
1 FGA25N120FTD
Field Stop Trench IGBT

FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT March 2013 FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Features • Field Stop Trench Technology • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A • High Input Impedance • RoHS Complaint Applications • Induction Heating, Microvewave Oven General Description Using advanced field stop

Fairchild Semiconductor
Fairchild Semiconductor
pdf

[1]    

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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