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FDP2572 PDF Datasheet

The FDP2572 is N-channel Powertrench MOSFET 150V/ 29a/ 54m. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 FDP2572
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m

FDB2572 / FDP2572 September 2002 FDB2572 / FDP2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features • r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82860 Applications • DC/DC

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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Power F-MOS FETs 2SK2572 2SK2572(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 15.5±0.5 3.0±0.3 energy capability guaranteed 4.5 q High-speed q Low q No switching ø3.2±0.1 10.0 26.5±0.5 ON-resistance 5˚ 5˚ 2.0 1.2 secondary breakdow

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Features · +4 dBm Output Level at 2572.5 MHz · Channel Step Size : 1250 kHz · 2nd Harmonic : < -25 dBc · Spurious Level : < -70 dBc · Lock Time : < 10 ms · 19 mA Current Consumption Description The plerowTM PLL synthesizer module was designed for use in wireless and wireli

ASB
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FDB2572   N-Channel PowerTrench MOSFET 150V/ 29A/ 54m

FDB2572 / FDP2572 September 2002 FDB2572 / FDP2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features • r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and R

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