No | Part number | Description ( Function ) | Manufacturers | |
25 | FDP020N06B | N-Channel PowerTrench MOSFET FDP020N06B — N-Channel PowerTrench® MOSFET FDP020N06B N-Channel PowerTrench® MOSFET 60 V, 313 A, 2 mΩ November 2013 Features • RDS(on) = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 194 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed |
Fairchild Semiconductor |
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24 | FDP023N08B | MOSFET ( Transistor ) FDP023N08B — N-Channel PowerTrench® MOSFET FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.35 mΩ November 2013 Features • RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low FOM RDS(on)*QG • Low Reverse Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Switching Speed • 100% |
Fairchild Semiconductor |
|
23 | FDP025N06 | MOSFET ( Transistor ) FDP025N06 — N-Channel PowerTrench® MOSFET FDP025N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.5 mΩ November 2013 Features • RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This |
Fairchild Semiconductor |
|
22 | FDP027N08B | N-Channel PowerTrench MOSFET FDP027N08B — N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ November 2013 Features • RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 112 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed |
Fairchild Semiconductor |
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21 | FDP030N06 | MOSFET ( Transistor ) FDP030N06 — N-Channel PowerTrench® MOSFET FDP030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This |
Fairchild Semiconductor |
|
20 | FDP030N06B_F102 | MOSFET ( Transistor ) FDP030N06B_F102 — N-Channel PowerTrench® MOSFET FDP030N06B_F102 N-Channel PowerTrench® MOSFET 60 V, 195 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr = 78 nC • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switchi |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |