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Datasheet FDN Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 42 | FDN302 | P-Channel 2.5V Specified PowerTrench MOSFET FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive vol |
 Fairchild Semiconductor |
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| 41 | FDN302P | P-Channel 2.5V Specified PowerTrench MOSFET FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive vol |
Fairchild Semiconductor |
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| 40 | FDN304P | P-Channel 1.8V Specified PowerTrench MOSFET FDN304P
June 2000 PRELIMINARY
FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –2.4 A, –20 |
Fairchild Semiconductor |
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| 39 | FDN304PZ | P-Channel 1.8V Specified PowerTrench MOSFET FDN304PZ
March 2003
FDN304PZ
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
• –2.4 A, –20 V. RDS(ON) |
Fairchild Semiconductor |
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