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Datasheet FDM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 366 | FDM-2B | FDM-2B w
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w
w
w
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S a
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U 4 t e
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 ETC |
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| 365 | FDM100-0045SP | Buck Chopper FDM 100-0045SP
Buck Chopper with Trench Power MOSFET and Schottky Diode
in ISOPLUS i4-PACTM
Preliminary data
3 5 4
ID25 = 100 A = 55 V VDSS RDSon typ. = 5.7 mΩ
1
2
5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 100 80 V V A A
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 IXYS Corporation |
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| 364 | FDM21-05QC | Q-Class Power MOSFETs
FMD 21-05QC FDM 21-05QC
Q-Class Power MOSFETs
Chopper Topologies in ISOPLUS i4-PACTM
FMD
3 3 5 4 1 2 2 4
ID25 = 21 A = 500 V VDSS RDSon typ. = 190 mΩ
FDM
Preliminary data
1 5
MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum R |
IXYS Corporation |
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| 363 | FDM2452NZ | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET FDM2452NZ
July 2005
FDM2452NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame w |
 Fairchild Semiconductor |
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