No | Part number | Description ( Function ) | Manufacturers | |
31 | FDH | High Conductance Low Leakage Diode FDH300/A / FDLL300/A / FDH333 / FDLL333 Discrete POWER & Signal Technologies FDH/FDLL 300/A / 333 COLOR BAND MARKING DEVICE FDLL300 FDLL300A 1ST BAND BROWN BROWN BROWN 2ND BAND GREEN YELLOW BLUE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL FDLL333 High Conductance Low Leakage Diode Sourced from Process 1M. See M |
![]() Fairchild Semiconductor |
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30 | FDH038AN08A1 | N-Channel PowerTrench MOSFET FDH038AN08A1 February 2003 FDH038AN08A1 N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developme |
![]() Fairchild Semiconductor |
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29 | FDH047AN08A0 | N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly de |
![]() Fairchild Semiconductor |
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28 | FDH055N15A | MOSFET ( Transistor ) FDH055N15A — N-Channel PowerTrench® MOSFET March 2015 FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.9 mΩ Features • RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This |
![]() Fairchild Semiconductor |
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27 | FDH1000 | High Conductance Switching Diodes |
![]() Fairchild Semiconductor |
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26 | FDH1040 | Fixed Inductors Fixed Inductors for Surface Mounting FDH1040/FDH1040B Inductance Range: 0.36~0.56µH DIMENSIONS FDH1040 11.2 4.0 Max. 2.55 (6.0) 2.55 FDH1040B 11.3 4.0 Max. 2.35 (6.6) 2.35 10.2 10.2 7.5 4.0 Tolerance : ±0.3 (Unit: mm) Recommended patterns FDH1040 FDH1040B 8.1 4.1 5.4 4.1 (Unit: mm) 3.8 6.0 3.8 (Unit: mm) FEATURES 11.3×10.2mm square and 4 |
![]() TOKO |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
![]() Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
![]() ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |