No | Part number | Description ( Function ) | Manufacturers | |
2 | F6N60 | IRF6N60 ! GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Design |
Suntac |
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1 | F6NK60Z | N-CHANNEL Power MOSFET STP6NK50Z - STF6NK60Z STD6NK50Z N-CHANNEL 500V - 0.98Ω - 5.6A TO-220 / TO-220FP / DPAK Zener-Protected SuperMESH™Power MOSFET TARGET DATA TYPE STP6NK50Z STF6NK50Z STD6NK50Z s s s s s s VDSS 500 V 500 V 500 V RDS(on) < 1.2 Ω < 1.2 Ω < 1.2 Ω ID 5.6 A 5.6 A 5.6 A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 0.98 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |