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Datasheet F38.9H Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 41 | F30 | Diode Switching 3KV 0.35A 2-Pin Case G-66 |
 New Jersey Semiconductor |
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| 40 | F3002 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |
 Polyfet RF Devices |
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| 39 | F3003 | Tube |
 CSF |
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| 38 | F301 | Diode ( Rectifier ) |
 American Microsemiconductor |
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