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F0118J PDF Datasheet

The F0118J is Gaas Infrared Emitting Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 F0118J
GaAs Infrared Emitting Diode

GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled® Gehäuse. • Chipgröße 300 x 300 µm2 • GaAlAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit • Gute spektr

OSRAM
OSRAM
pdf

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Part No Description ( Function) Manufacturers PDF
F0118G   GaAs Infrared Emitting Diode

GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED® Gehäuse • Chipgröße 300 x 300 µm2 • Emissio

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CGR-0118Z   DUAL CATV 5MHz to 65MHz CATV AMP IC

CGR-0118Z Dual CATV 5MHz to 65MHz CATV Amp IC CGR-0118Z DUAL CATV 5MHz to 65MHz CATV AMP IC Package: SOIC 8 Product Description RFMD’s CGR-0118Z is a high performance 75 Ω push-pull InGaP HBT MMIC amplifier utilizing a Darlington configuration with an act

RF Micro Devices
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[1]    

List of most widely used semiconductors

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1N4007

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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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