No | Part number | Description ( Function ) | Manufacturers | |
27 | EKI04027 | N Channel Trench Power MOSFET 40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04027 Features V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 85 A RDS(ON) ----------3.2 mΩ max. (VGS = 10 V, ID = 82.5 A) Qg------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A) Low Total Gate Charge High Speed Switc |
SANKEN |
|
26 | EKI04036 | N Channel Trench Power MOSFET 40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04036 Features V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A) Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate Charge High Speed Switc |
SANKEN |
|
25 | EKI04047 | N Channel Trench Power MOSFET 40 V, 80 A, 4.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI04047 Features V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 80 A RDS(ON) ----------5.2 mΩ max. (VGS = 10 V, ID = 42.8 A) Qg------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate Charge High Speed Switc |
SANKEN |
|
24 | EKI06051 | N Channel Trench Power MOSFET 60 V, 85 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI06051 Features V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 85 A RDS(ON) ----------4.9 mΩ max. (VGS = 10 V, ID = 55.0 A) Qg------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate Charge High Speed Switc |
SANKEN |
|
23 | EKI06075 | N Channel Trench Power MOSFET 60 V, 78 A, 5.1 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI06075 Features V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 78 A RDS(ON) ----------6.6 mΩ max. (VGS = 10 V, ID = 39.0 A) Qg------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate Charge High Speed Switc |
SANKEN |
|
22 | EKI06108 | N Channel Trench Power MOSFET 60 V, 57 A, 7.0 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI06108 Features V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 57 A RDS(ON) ----------9.2 mΩ max. (VGS = 10 V, ID = 28.5 A) Qg------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate Charge High Speed Switc |
SANKEN |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |