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Datasheet EB13009 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | EB13009 | Case rated low frequency amplification bipolar transistor WEIFANG HUICHUAN ELECTRONIC
CO.,LTD.
EB13009
低频放大管壳额定双极型晶体管 13009
1、概述与特点 13009 是 NPN 型三极管,用作电子镇流器、电子节能灯的功率开关管,是其核心器件。其特点如下: 开关损耗低。可靠性高。 高温特性好。 � | WEIFANG HUICHUAN | transistor |
2 | EB13009D | EB SERIES TRANSISTORS SY semiconductors
Shenzhen SY Semiconductors Co.£¬ LTD.
EB SERIES TRANSISTORS EB13009D ¡ñ FEATURES£º ¢Ù HIGH VOLTAGE CAPABILITY ¢Ú HIGH SPEED SWITCHING ¢Û WIDE SOA
¡ñ APPLICATION£º ¢Ù FLUORESCENT LAMP ¢Ú ELECTRON I C BALLAST
¡ñ Absolute Maximum Ratings (Tc=25¡æ )
PARAMETER | SY semiconductors | transistor |
EB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | EB102 | Transistor Shenzhen SYS Semiconductors Co., LTD.
Product Specification
EB SERIES TRANSISTORS
FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST WIDE SOA
EB102
Absolute Maximum Ratings
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Bas SYS Semiconductors transistor | | |
2 | EB102DL | Transistor SY semiconductors
● 特点
耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
FEATURES ▲HIGH
Shenzhen SY Semiconductors Co.,LTD. EB102DL
CAPABILTY
VOLTAGE
▲HIGH
SPEED
SWITCHING
● 应用
节能灯、电子镇流器 电子变压器、开关电源
▲WIDE SOA ▲RoHS COM SY Semiconductors transistor | | |
3 | EB102H | EB SERIES TRANSISTORS Shenzhen Shengyuan Semiconductors Co., LTD.
Product Specification
EB SERIES TRANSISTORS
FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST WIDE SOA
EB102
Absolute Maximum Ratings
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitte Shengyuan transistor | | |
4 | EB105 | 800MHz AMPLIFIER MOTOROLA
Order this document by EB105/D
SEMICONDUCTOR
ENGINEERING BULLETIN
EB105
A 30 WATT, 800 MHz AMPLIFIER DESIGN
Prepared by: Alan Wood Semiconductor Product Sector
INTRODUCTION
Simplicity and compactness mark the design of this 30 Watt amplifier des igned for the 800 MHz mobile communicati Motorola Semiconductors amplifier | | |
5 | EB11 | Duo Diode page 1 2 3
EB11
sheet 100139a-a 100139a-b FP
date 1939.01 1939.01 2000.02.04
TELEFUNKEN diode | | |
6 | EB12VN5 | Low Capacitance Single-Line Bi-Directional ESD protection Diode Low Capacitance Single-Line Bi-Directional ESD
EBXXVN5
Low Capacitance Single-Line Bi-Directional ESD protection Diode
■DEDESCRIPTION
■FEATURE
The EBXXVN5 Series is designed to protect voltage 100Watts Peak Pulse Power per line(tp=8/20μs) sensitive components that require low capacitan Semtron diode | | |
7 | EB12VN5-TRG | Low Capacitance Single-Line Bi-Directional ESD protection Diode Low Capacitance Single-Line Bi-Directional ESD
EBXXVN5
Low Capacitance Single-Line Bi-Directional ESD protection Diode
■DEDESCRIPTION
■FEATURE
The EBXXVN5 Series is designed to protect voltage 100Watts Peak Pulse Power per line(tp=8/20μs) sensitive components that require low capacitan Semtron diode | |
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Número de pieza | Descripción | Fabricantes | |
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