No | Part number | Description ( Function ) | Manufacturers | |
1 | DS3151 | Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs DEMO KIT AVAILABLE www.maxim-ic.com DS3151/DS3152/DS3153/DS3154 Single/Dual/Triple/Quad DS3/E3/STS-1 LIUs GENERAL DESCRIPTION The DS3151 (single), DS3152 (dual), DS3153 (triple), and DS3154 (quad) line interface units (LIUs) perform the functions necessary for interfacing at the physical layer to DS3, E3, or STS-1 lines. Each LIU has independent receive and transmit paths an |
Maxim Integrated |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to DS3151 |
Part No | Description ( Function) | Manufacturers | |
2506031517Y0 | Chip Beads 15th Edition 27 Board Components Fair-Rite Products Corp. Phone: (888) FAIR RITE / (845) 895-2055 • FAX: (888) FERRITE / (845) 895-2629 (888) 324-7748 (888) 337 -7483 PO Box J, One Commercial Row, Wallkill, NY 12589-0288 • www.fair-rite.com • E-Mai |
Fair-Rite Products |
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2SC3151 | NPN Triple Diffused Planar Silicon Transistor Ordering number:EN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3151] Specifications 1 : Base |
Sanyo Semicon Device |
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2SC3151 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3151 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 900V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·800V/1.5A Switching Regulator App |
SavantIC |
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2SK3151 | Silicon N Channel MOS FET High Speed Power Switching 2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–3P D 2 1 G 1 3 S |
Hitachi Semiconductor |
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2SK3151 | Silicon N Channel MOS FET 2SK3151 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Outline RENESAS |
Renesas |
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