No | Part number | Description ( Function ) | Manufacturers | |
1 | DRC3114E | Silicon NPN epitaxial planar type DRC3114E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3114E DRC9114E in SSSMini3 type package Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm Marking Symbol: NB Packaging DRC3114E0L Embossed type (Thermo-compression sealing): 10 00 |
PANASONIC |
0  1  2  3  4  5  6  7  8 9 |
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2N3114 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 |
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2N3114 | NPN Transistor OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3114 Data Sheet www.semicon-data.com |
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2N3114 | High Voltage Amplifier |
STMicroelectronics |
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2N3114CSM | Bipolar NPN Device 2N3114CSM Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) Bipolar NPN Device in a Hermetically seal |
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