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Datasheet DP1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 28 | DP100 | PNP Silicon Transistor
Semiconductor
DP100
PNP Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) • Suitable for low voltage large current drivers • Complementary pair with DN100 • Switching Application
Ordering I |
 AUK |
 |
| 27 | DP100S | PNP Silicon Transistor Semiconductor
DP100S
PNP Silicon Transistor
Features
• Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC /IB =-400mA/-20mA) • Suitable for low voltage large current drivers • Complementary pair with DN100S • Switching Application
Ordering Information
Type |
AUK |
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| 26 | DP104 | DP104 w
w
w
t a .D
S a
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U 4 t e
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www.DataSheetLIST.com
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 ETC |
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| 25 | DP10D1200T*1016xx | E2 IGBT Modules E2 IGBT Modules
Technical specifications
• Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max. 50 pins • Dimensions: – Size: 45×107.5 mm – Pitch: 3.81 mm • Up to 690 V line vol |
 Danfoss Silicon Power GmbH |
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