No | Part number | Description ( Function ) | Manufacturers | |
2 | DIM200MHS17-A000 | Half Bridge IGBT Module DIM200MHS17-A000 DIM200MHS17-A000 Half Bridge IGBT Module Replaces issue March 2002, version DS5459-4.0 DS5459-5.1 June 2002 FEATURES s s s 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 200A 400A *(measured at the power busbars and not the auxili |
Dynex |
|
1 | DIM200MHS17-A000 | Igbt Modules - Half Bridge DIM200MHS17-A000 DIM200MHS17-A000 Half Bridge IGBT Module Replaces issue March 2002, version DS5459-4.0 DS5459-5.1 June 2002 FEATURES s s s 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 200A 400A *(measured at the power busbars and not the auxili |
Dynex Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |