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Datasheet DFF2N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1DFF2N60N-Channel MOSFET

DFF2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A 3. Source General Description This N-channel enhancement mod
DnI
DnI
mosfet


DFF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1DFF2N60N-Channel MOSFET

DFF2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A 3. Source General Description This N-channel enhancement mod
DnI
DnI
mosfet
2DFF30N06N-Channel MOSFET

DFF30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0
DnI
DnI
mosfet
3DFF4N60N-Channel MOSFET

DFF4N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A 3. Source Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel
DnI
DnI
mosfet
4DFF50N06N-Channel MOSFET

DFF50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.023Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.023 ohm ID = 28A General Description This N-chan
DnI
DnI
mosfet
5DFF7N60N-Channel MOSFET

DFF7N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 1.0 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 1.0 ohm ID = 7.4A 3. Source Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-chann
DnI
DnI
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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