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Datasheet DFF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | DFF2N60 | 2.4A, 600V, N-Channel MOSFET
DFF2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
{ {
2. Drain
BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A
3. Source
General Description
This N-channel enhancement mod |
 DnI |
 |
| 4 | DFF30N06 | N-Channel MOSFET
DFF30N06
N-Channel MOSFET
Features
■ ■ ■ ■ ■ ■
Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range
2.Drain
BVDSS = 60V
1.Gate 3.Source
RDS(ON) = 0 |
DnI |
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| 3 | DFF4N60 | N-Channel MOSFET
DFF4N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A
3. Source
Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel |
DnI |
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| 2 | DFF50N06 | N-Channel MOSFET
DFF50N06
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.023Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.Drain
BVDSS = 60V
1.Gate 3.Source
RDS(ON) = 0.023 ohm ID = 28A
General Description
This N-chan |
DnI |
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| Número de pieza | Descripción | Fabricantes | |
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