No | Part number | Description ( Function ) | Manufacturers | |
1 | D9916L | STD9916L STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD |
SamHop Microelectronics |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to D9916L |
Part No | Description ( Function) | Manufacturers | |
SDD9916 | N-Channel E nhancement Mode F ield E ffect Transistor S DU/D9916 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) TYP ID 20A R DS (ON) S uper high dense cell design for low R DS (ON ). 25 @ V G S = 4.5V 35 @ V G S = 2.7V |
SamHop Microelectronics Corp. |
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STD9916L | N-Channel Enhancement Mode Field Effect Transistor STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V |
SamHop Microelectronics |
|
STD9916L | N-Channel Enhancement Mode Field Effect Transistor STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V |
SamHop Microelectronics |
|
9916H | AP9916H datasheet39.com AP9916H/J Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power |
Advanced Power Electronics |
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9916H | AP9916H datasheet39.com AP9916H/J Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25mΩ 35A Description The Advanced Power |
Advanced Power Electronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |