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D882 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
16 D882
TO-126 Plastic-Encapsulate Transistors

w w w .D at aS he et 4U .c om

ETC
ETC
pdf
15 D882
Si NPN Transistor

YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity D882 D882 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Volt

Wuxi Youda Electronics
Wuxi Youda Electronics
pdf
14 D882
PNP TRANSISTOR

PNP TRANSISTOR 3.0A z z z D882 AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] Ta=25¢J¡^ PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo 30 V Ic=1mA Collector-Base Breakdown Voltage BVcbo 40 V Ic=5uA Emitter-Base Breakdown Voltage BVebo 5 V Ie=50

Stanson Technology
Stanson Technology
pdf
13 D882
Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-251/252 Plastic-Encapsulated Transistors 6. 5 0¡ À 0. 10 2 . 30¡ À 0. 05 0. 5 1¡ À 0 . 03 D882 FEATURES TRANSISTOR (NPN) 14. 70 5¡ ã 5¡ ã 0. 80¡ À 0. 0 5 0. 6 0¡ À 0. 0 5 1. Power dissipation PCM: 1.25 W (Tamb=25℃) 2. 3. BASE 2. 3 0¡ À 0. 05 2. 3 0¡ À 0. 0 5 1 . 20 0. 51 ¡ À 0 . 03 12

TRANSYS Electronics
TRANSYS Electronics
pdf
12 D882
Plastic-Encapsulate Transistors

WILLAS SO1.0TA-S8U9RFPAlCaEsMtOicUN-ET SnCcHaOpTTsKuY BlaAtReRIETRrRaEnCsTIiFsIEtRoSr-s20V- 200V SOD-123+ PACKAGE FM120-M+ D882 THRU FM1200-M Pb Free Produc Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to TRANSISTOoRpti(mNizPeNb)oard space. •

WILLAS
WILLAS
pdf
11 D882
NPN TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR£¨NPN £© TO¡ª 126 FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARA

Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
pdf



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