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Datasheet D6849 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D6849 | NPN Transistor, 2SD6849 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD649
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability
APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PAR |  Inchange Semiconductor | data |
D68 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D6849 | NPN Transistor, 2SD6849 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD649
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability
APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PAR Inchange Semiconductor data | | |
| 2 | D686 | NPN Transistor, 2SD686 SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD686
DESCRIPTION www.dat·aWshiethet4Tu.Oco-m220C package
·Complement to type 2SB676 ·DARLINGTON ·High DC current gain
APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applicati  SavantIC data | | |
| 3 | D688 | NPN Transistor, 2SD688 Toshiba data | | |
| 4 | D689 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A ·Compleme  INCHANGE transistor | |
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